absolute maximum ratings t a = 25c unless otherwise noted symbol parameter value units p d power dissipation 200 mw t stg storage temperature range -55 to +125 c t j operating junction temperature +125 c v rm peal reverse voltage 40 v v r reverse voltage 30 v i f fo r w a rd c u rrent 5 0 ma i fsm non-repetitive peak forward current (at 8.3ms single half sine-wave) 200 ma these ratings are limiting values above which the serviceability of the diode may be impaired. specification features: ? low forward voltage drop ? flat lead sod-523 small outline plastic package ? extremely small sod-523 package ? surface device type mounting ? rohs compliant ? green emc ? matte tin(sn) lead finish ? band indicates cathode device marking codes: device type device marking rb75 1 s-40 4 b electrical characteristics t a = 25c unless otherwise noted limits symbol parameter test condition min max unit b v breakdown voltage i r =10a 30 volts i r reverse leakage current v r =30v 0.5 a v f forward voltage tcbat42ws, i f =1ma 0.37 volts tcRB751S-40 200mw sod-523 surface mount very small outline flat lead plastic package schottky barrier diode r b 7 5 1 s - 4 0
typical performance characteristics total capacitance forward voltage vs ambient temperature r b 7 5 1 s - 4 0
reverse current vs reverse voltagereverse flat lead sod-523 package outline note: dimensions are exclusive of burrs, mold flash & tie bar extrusions. r b 7 5 1 s - 4 0
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